| \? vs-HFAo4TB6oPbF, VS-HFA04TB60-N3www.visha .com - - 7 y Vlshay Semiconductors 100 1000 2 100§ E 10 5 10 1 '0 g 3 — = 2 E ‘E 5 5 1 N UM 1H 0T § 1 5 0.1% E _|“: 0.01 .- 0_1IIIIIIIIIIIIIIIIIIIIII Om. ---------0 100 200 300 400 500 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Fig. 2 - Typical Reverse Current vs. Instantaneous Forward Current Reverse Voltage 100 3 CT - Junction capaci1ance(pF) 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 8: 8.In 1w I: EE\_ 2'7 01 Single pulse g (ihermal resistance) N‘ 1 Duty Iactor D : I‘/I2 2 Peak TJ : PDM x ZWC + Tc 0.01 0.00001 0 0001 0.001 0 01 01 1 11 — Rectangular Pulse Duration (5) Fig. 4 - Maximum Thermal Impedance ZWC Characteristics Revision: 17-Aug-11 3 Document Number: 94035 For technical questions within your region: DiodesAmericas@vishay.Com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.c9m/doc?91000 |